Version 4
SHEET 1 2064 680
WIRE 240 -176 -80 -176
WIRE 640 -176 320 -176
WIRE -80 -96 -80 -176
WIRE 640 -96 640 -176
WIRE -80 48 -80 -16
WIRE 640 48 640 -32
WIRE 640 48 -80 48
WIRE -80 64 -80 48
FLAG -80 64 0
SYMBOL ind 224 -160 R270
WINDOW 0 32 56 VTop 2
WINDOW 3 5 56 VBottom 2
SYMATTR InstName L
SYMATTR Value 100mH
SYMBOL voltage -80 -112 R0
WINDOW 123 0 0 Left 2
WINDOW 39 0 0 Left 2
SYMATTR InstName V
SYMATTR Value SINE(0 10 20k)
SYMBOL diode 624 -96 R0
SYMATTR InstName D
SYMATTR Value 1N4001
TEXT -96 112 Left 2 !.tran 0 100m 70m 0.1
TEXT -104 224 Left 2 !.model 1N4001 D(Is=14.11n N=1.984 Rs=33.89m Ikf=94.81 Xti=3 Eg=1.11 Cjo=25.89p M=.44 Vj=.3245 Fc=.5 Bv=75 Ibv=10u Tt=5.7u Iave=1 Vpk=50 mfg=GI type=silicon)